All MOSFET. IRFZ24N Datasheet

 

IRFZ24N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ24N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO220AB

IRFZ24N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ24N Datasheet (PDF)

0.1. irfz24n 1.pdf Size:53K _philips

IRFZ24N
IRFZ24N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 17 A features very low on-s

0.2. irfz24npbf.pdf Size:242K _international_rectifier

IRFZ24N
IRFZ24N

 IRFZ24NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating l 175°C Operating Temperature DSS l Fast Switching l Fully Avalanche Rated DS(on) Ω G l Lead-Free Description D S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res

 0.3. irfz24n.pdf Size:123K _international_rectifier

IRFZ24N
IRFZ24N

PD - 91354A IRFZ24N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.07Ω Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per sili

0.4. irfz24nlpbf.pdf Size:675K _international_rectifier

IRFZ24N
IRFZ24N

PD - 95147 IRFZ24NS/LPbF HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07Ω Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 0.5. irfz24nspbf.pdf Size:672K _international_rectifier

IRFZ24N
IRFZ24N

PD - 95147 IRFZ24NS/LPbF HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07Ω Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

0.6. irfz24n 1.pdf Size:53K _international_rectifier

IRFZ24N
IRFZ24N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 17 A features very low on-s

0.7. irfz24ns.pdf Size:159K _international_rectifier

IRFZ24N
IRFZ24N

PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07Ω Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

0.8. irfz24nlpbf.pdf Size:214K _inchange_semiconductor

IRFZ24N
IRFZ24N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ24NLPbF ·FEATURES ·With TO-262(DPAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

0.9. irfz24nspbf.pdf Size:203K _inchange_semiconductor

IRFZ24N
IRFZ24N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ24NSPbF ·FEATURES ·With TO-263(D2PAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

Datasheet: IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , IRFZ24 , IRFZ24A , IRFP150N , IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E .

 

 
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