Справочник MOSFET. IRFZ24N

 

IRFZ24N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFZ24N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 45 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 17 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 20(max) nC
   Время нарастания (tr): 34 ns
   Выходная емкость (Cd): 140 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.07 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IRFZ24N

 

 

IRFZ24N Datasheet (PDF)

 ..1. Size:123K  international rectifier
irfz24n.pdf

IRFZ24N
IRFZ24N

PD - 91354AIRFZ24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 17ASFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper sili

 ..2. Size:53K  international rectifier
irfz24n 1.pdf

IRFZ24N
IRFZ24N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s

 ..3. Size:242K  international rectifier
irfz24npbf.pdf

IRFZ24N
IRFZ24N

IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res

 ..4. Size:53K  philips
irfz24n 1.pdf

IRFZ24N
IRFZ24N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s

 ..5. Size:242K  infineon
irfz24npbf.pdf

IRFZ24N
IRFZ24N

IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res

 0.1. Size:675K  international rectifier
irfz24nlpbf.pdf

IRFZ24N
IRFZ24N

PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 0.2. Size:159K  international rectifier
irfz24ns.pdf

IRFZ24N
IRFZ24N

PD - 9.1355BIRFZ24NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

 0.3. Size:672K  international rectifier
irfz24nspbf.pdf

IRFZ24N
IRFZ24N

PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 0.4. Size:641K  infineon
auirfz24ns auirfz24nl.pdf

IRFZ24N
IRFZ24N

AUIRFZ24NS AUTOMOTIVE GRADE AUIRFZ24NL HEXFET Power MOSFET Features Advanced Planar Technology VDSS 55V Low On-Resistance Dynamic dV/dT and dI/dT capability 175C Operating Temperature RDS(on) max. 0.07 Fast Switching Fully Avalanche Rated ID 17A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D

 0.5. Size:2064K  cn vbsemi
irfz24ns.pdf

IRFZ24N
IRFZ24N

IRFZ24NSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 0.6. Size:214K  inchange semiconductor
irfz24nlpbf.pdf

IRFZ24N
IRFZ24N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NLPbFFEATURESWith TO-262(DPAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.7. Size:203K  inchange semiconductor
irfz24nspbf.pdf

IRFZ24N
IRFZ24N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NSPbFFEATURESWith TO-263(D2PAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

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