IRFZ24N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ24N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 17 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 20(max) nC
Время нарастания (tr): 34 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.07 Ohm
Тип корпуса: TO220
IRFZ24N Datasheet (PDF)
irfz24n.pdf
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PD - 91354AIRFZ24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 17ASFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper sili
irfz24n 1.pdf
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Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s
irfz24npbf.pdf
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IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res
irfz24n 1.pdf
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Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s
irfz24npbf.pdf
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IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res
irfz24nlpbf.pdf
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PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
irfz24ns.pdf
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PD - 9.1355BIRFZ24NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
irfz24nspbf.pdf
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PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
auirfz24ns auirfz24nl.pdf
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AUIRFZ24NS AUTOMOTIVE GRADE AUIRFZ24NL HEXFET Power MOSFET Features Advanced Planar Technology VDSS 55V Low On-Resistance Dynamic dV/dT and dI/dT capability 175C Operating Temperature RDS(on) max. 0.07 Fast Switching Fully Avalanche Rated ID 17A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D
irfz24ns.pdf
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IRFZ24NSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
irfz24nlpbf.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NLPbFFEATURESWith TO-262(DPAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irfz24nspbf.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NSPbFFEATURESWith TO-263(D2PAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Другие MOSFET... IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 , IRFZ20 , IRFZ22 , IRFZ24 , IRFZ24A , 8205A , IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E .
![IRFZ24N](https://alltransistors.com/images/us.png)
![IRFZ24N](https://alltransistors.com/images/es.png)
![IRFZ24N](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: NCES120R018T4 | NCES120P075T4 | NCES120P035T4 | NCES075R026T4 | NCES075R026T | NCEP60ND60G | NCEP60ND30AG | NCEP40T14A | NCEP40ND80G | NCEP1580F | NCEP023NH85GU | NCEP023NH85AGU | NCEP018NH30QU | NCEP015NH30GU | NCEP015NH30AQU | NCEP015NH30AGU