FQPF5N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF5N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: TO-220F

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FQPF5N60 datasheet

 ..1. Size:624K  fairchild semi
 fqpf5n60.pdf pdf_icon

FQPF5N60

TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to Fas

 0.1. Size:858K  fairchild semi
 fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQPF5N60

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

 0.2. Size:1159K  fairchild semi
 fqpf5n60c.pdf pdf_icon

FQPF5N60

December 2013 FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC) technology has been

 0.3. Size:839K  onsemi
 fqp5n60c fqpf5n60c.pdf pdf_icon

FQPF5N60

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

MOSTRAR MÁS

Otros transistores... FQPF5N20, FQPF5N20L, FQPF5N30, FQPF5N50, FQPF5N50CFTU, FQPF5N50CT, FQPF5N50CTTU, FQPF5N50CYDTU, AON6414A, FQPF5N60CYDTU, FQPF5N80, FQPF5P10, FQPF6N15, FQPF6N25, FQPF6N40C, FQPF6N40CF, FQPF6N40CT