All MOSFET. FQPF5N60 Datasheet

 

FQPF5N60 Datasheet and Replacement


   Type Designator: FQPF5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220F
 

 FQPF5N60 substitution

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FQPF5N60 Datasheet (PDF)

 ..1. Size:624K  fairchild semi
 fqpf5n60.pdf pdf_icon

FQPF5N60

TMQFETFQPF5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especially tailored to Fas

 0.1. Size:858K  fairchild semi
 fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQPF5N60

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 0.2. Size:1159K  fairchild semi
 fqpf5n60c.pdf pdf_icon

FQPF5N60

December 2013FQP5N60C / FQPF5N60CN-Channel QFET MOSFET600 V, 4.5 A, 2.5 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.25 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC)technology has been

 0.3. Size:839K  onsemi
 fqp5n60c fqpf5n60c.pdf pdf_icon

FQPF5N60

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

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Datasheet: FQPF5N20 , FQPF5N20L , FQPF5N30 , FQPF5N50 , FQPF5N50CFTU , FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU , IRFB4110 , FQPF5N60CYDTU , FQPF5N80 , FQPF5P10 , FQPF6N15 , FQPF6N25 , FQPF6N40C , FQPF6N40CF , FQPF6N40CT .

History: HGP155N15S | 20N65NF | SIR416DP | 2SK3541-P | HMS4030D | DAC014N120Z5 | AP9563GJ-HF

Keywords - FQPF5N60 MOSFET datasheet

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 FQPF5N60 equivalent finder
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