FQPF5N60. Аналоги и основные параметры

Наименование производителя: FQPF5N60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 80 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm

Тип корпуса: TO-220F

Аналог (замена) для FQPF5N60

- подборⓘ MOSFET транзистора по параметрам

 

FQPF5N60 даташит

 ..1. Size:624K  fairchild semi
 fqpf5n60.pdf pdf_icon

FQPF5N60

TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to Fas

 0.1. Size:858K  fairchild semi
 fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQPF5N60

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

 0.2. Size:1159K  fairchild semi
 fqpf5n60c.pdf pdf_icon

FQPF5N60

December 2013 FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC) technology has been

 0.3. Size:839K  onsemi
 fqp5n60c fqpf5n60c.pdf pdf_icon

FQPF5N60

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

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