FQPF9N25CYDTU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF9N25CYDTU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm

Encapsulados: TO-220F

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FQPF9N25CYDTU datasheet

 ..1. Size:1134K  fairchild semi
 fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf pdf_icon

FQPF9N25CYDTU

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

 5.1. Size:1136K  fairchild semi
 fqp9n25c fqpf9n25c.pdf pdf_icon

FQPF9N25CYDTU

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

 5.2. Size:543K  onsemi
 fqpf9n25c fqpf9n25ct.pdf pdf_icon

FQPF9N25CYDTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:1136K  onsemi
 fqp9n25c fqpf9n25c.pdf pdf_icon

FQPF9N25CYDTU

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

MOSTRAR MÁS

Otros transistores... FQPF8N60CYDTU, FQPF8N80CYDTU, FQPF8P10, FQPF90N10V2, FQPF9N08, FQPF9N08L, FQPF9N15, FQPF9N25CT, IRFP450, FQPF9N30, FQPF9N50, FQPF9N50CT, FQPF9N50CYDTU, FQPF9N50T, FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU