FQPF9N25CYDTU Todos los transistores

 

FQPF9N25CYDTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF9N25CYDTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
   Paquete / Cubierta: TO-220F
 

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FQPF9N25CYDTU Datasheet (PDF)

 ..1. Size:1134K  fairchild semi
 fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf pdf_icon

FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

 5.1. Size:1136K  fairchild semi
 fqp9n25c fqpf9n25c.pdf pdf_icon

FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

 5.2. Size:543K  onsemi
 fqpf9n25c fqpf9n25ct.pdf pdf_icon

FQPF9N25CYDTU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:1136K  onsemi
 fqp9n25c fqpf9n25c.pdf pdf_icon

FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

MOSTRAR MÁS

Otros transistores... FQPF8N60CYDTU , FQPF8N80CYDTU , FQPF8P10 , FQPF90N10V2 , FQPF9N08 , FQPF9N08L , FQPF9N15 , FQPF9N25CT , IRF1407 , FQPF9N30 , FQPF9N50 , FQPF9N50CT , FQPF9N50CYDTU , FQPF9N50T , FQPF9N50YDTU , FQPF9N90CT , FQPF9P25YDTU .

History: PJP2NA60

 

 
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