All MOSFET. FQPF9N25CYDTU Datasheet

 

FQPF9N25CYDTU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQPF9N25CYDTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.5 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: TO-220F

 FQPF9N25CYDTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF9N25CYDTU Datasheet (PDF)

 ..1. Size:1134K  fairchild semi
 fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf

FQPF9N25CYDTU FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

 5.1. Size:1136K  fairchild semi
 fqp9n25c fqpf9n25c.pdf

FQPF9N25CYDTU FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

 5.2. Size:543K  onsemi
 fqpf9n25c fqpf9n25ct.pdf

FQPF9N25CYDTU FQPF9N25CYDTU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:1136K  onsemi
 fqp9n25c fqpf9n25c.pdf

FQPF9N25CYDTU FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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