Справочник MOSFET. FQPF9N25CYDTU

 

FQPF9N25CYDTU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF9N25CYDTU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.43 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

FQPF9N25CYDTU Datasheet (PDF)

 ..1. Size:1134K  fairchild semi
 fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf pdf_icon

FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

 5.1. Size:1136K  fairchild semi
 fqp9n25c fqpf9n25c.pdf pdf_icon

FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

 5.2. Size:543K  onsemi
 fqpf9n25c fqpf9n25ct.pdf pdf_icon

FQPF9N25CYDTU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:1136K  onsemi
 fqp9n25c fqpf9n25c.pdf pdf_icon

FQPF9N25CYDTU

QFETFQP9N25C/FQPF9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailor

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History: IRFP250A | STK0260D

 

 
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