IRFZ34N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ34N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 56 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO220AB

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IRFZ34N Datasheet (PDF)

1.1. irfz34n.pdf Size:104K _international_rectifier

PD -9.1276C IRFZ34N HEXFET� Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 0.040? Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per si

1.2. irfz34ns.pdf Size:161K _international_rectifier

PD - 9.1311A IRFZ34NS/L HEXFET� Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175�C Operating Temperature RDS(on) = 0.040? Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

4.1. irfz34pbf.pdf Size:2027K _international_rectifier

PD - 94944 IRFZ34PbF � Lead-Free 01/14/04 Document Number: 91290 www.vishay.com 1 IRFZ34PbF Document Number: 91290 www.vishay.com 2 IRFZ34PbF Document Number: 91290 www.vishay.com 3 IRFZ34PbF Document Number: 91290 www.vishay.com 4 IRFZ34PbF Document Number: 91290 www.vishay.com 5 IRFZ34PbF Document Number: 91290 www.vishay.com 6 IRFZ34PbF TO-220AB Package Outline Dime

4.2. irfz34e.pdf Size:120K _international_rectifier

PD - 9.1672A IRFZ34E HEXFET� Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 0.042? Fast Switching G Ease of Paralleling ID = 28A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per s

4.3. irfz34vs.pdf Size:128K _international_rectifier

PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET� Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175�C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28m? G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET� Power MOSFETs from International S Rectifier utilize advanced processing techniques to

4.4. irfz34v.pdf Size:104K _international_rectifier

PD - 94042 IRFZ34V HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 28m? G Fast Switching Fully Avalanche Rated ID = 30A Optimized for SMPS Applications S Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

4.5. irfz34.pdf Size:171K _international_rectifier

4.6. irfz34s.pdf Size:302K _international_rectifier

PD - 9.892A IRFZ34S/L HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175�C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

4.7. irfz34s-l.pdf Size:193K _international_rectifier

4.8. irfz34a.pdf Size:500K _samsung

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature �A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

4.9. irfz34 sihfz34.pdf Size:1556K _vishay

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 60 Available � 175 �C Operating Temperature RDS(on) (?)VGS = 10 V 0.050 RoHS* � Fast Switching Qg (Max.) (nC) 46 COMPLIANT � Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 � Simple Drive Requirements Configuration Single � Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir

Otros transistores... IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E , APT50M38JLL , IRFZ34NL , IRFZ34NS , IRFZ35 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A .

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