All MOSFET. IRFZ34N Datasheet

 

IRFZ34N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ34N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 26 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 22.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220AB

IRFZ34N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ34N Datasheet (PDF)

0.1. irfz34n.pdf Size:104K _international_rectifier

IRFZ34N
IRFZ34N

PD -9.1276CIRFZ34NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance

0.2. irfz34npbf.pdf Size:179K _international_rectifier

IRFZ34N
IRFZ34N

PD - 94807IRFZ34NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible o

 0.3. irfz34nlpbf irfz34nspbf.pdf Size:296K _international_rectifier

IRFZ34N
IRFZ34N

PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

0.4. irfz34ns.pdf Size:161K _international_rectifier

IRFZ34N
IRFZ34N

PD - 9.1311AIRFZ34NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040 Fast SwitchingG Fully Avalanche RatedID = 29ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

 0.5. irfz34n.pdf Size:109K _infineon

IRFZ34N
IRFZ34N

PD -9.1276CIRFZ34NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.040 Fast SwitchingG Ease of ParallelingID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance

0.6. irfz34nspbf irfz34nlpbf.pdf Size:296K _infineon

IRFZ34N
IRFZ34N

PD - 95571IRFZ34NSPbFIRFZ34NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Surface Mount (IRFZ34NS)l Low-profile through-hole (IRFZ34NL) DVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.040l Fully Avalanche RatedGl Lead-FreeID = 29ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing tech

0.7. irfz34ns.pdf Size:258K _inchange_semiconductor

IRFZ34N
IRFZ34N

isc N-Channel MOSFET Transistor IRFZ34NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E , APT50M38JLL , IRFZ34NL , IRFZ34NS , IRFZ35 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A .

 

 
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