All MOSFET. IRFZ34N Datasheet

 

IRFZ34N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ34N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 26 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 22.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220AB

IRFZ34N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ34N Datasheet (PDF)

0.1. irfz34n.pdf Size:104K _international_rectifier

IRFZ34N IRFZ34N

PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

0.2. irfz34npbf.pdf Size:179K _international_rectifier

IRFZ34N IRFZ34N

PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Ease of Paralleling ID = 29A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o

 0.3. irfz34nlpbf irfz34nspbf.pdf Size:296K _international_rectifier

IRFZ34N IRFZ34N

PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l Advanced Process Technology HEXFET® Power MOSFET l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) D VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.040Ω l Fully Avalanche Rated G l Lead-Free ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

0.4. irfz34ns.pdf Size:161K _international_rectifier

IRFZ34N IRFZ34N

PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 0.5. irfz34ns.pdf Size:258K _inchange_semiconductor

IRFZ34N IRFZ34N

isc N-Channel MOSFET Transistor IRFZ34NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

Datasheet: IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E , APT50M38JLL , IRFZ34NL , IRFZ34NS , IRFZ35 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A .

 

 
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