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FQU7P06TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQU7P06TU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 28 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 5.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 6.3 nC

Tiempo de elevación (tr): 50 nS

Conductancia de drenaje-sustrato (Cd): 110 pF

Resistencia drenaje-fuente RDS(on): 0.451 Ohm

Empaquetado / Estuche: I-PAK

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FQU7P06TU Datasheet (PDF)

1.1. fqu7p06tu.pdf Size:707K _fairchild_semi

FQU7P06TU
FQU7P06TU

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially

3.1. fqd7p06 fqu7p06.pdf Size:707K _fairchild_semi

FQU7P06TU
FQU7P06TU

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

 5.1. fqu7p20tu.pdf Size:731K _fairchild_semi

FQU7P06TU
FQU7P06TU

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect • -5.7A, -200V, RDS(on) = 0.69Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technolo

5.2. fqd7p20 fqu7p20.pdf Size:731K _fairchild_semi

FQU7P06TU
FQU7P06TU

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been e

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