Справочник MOSFET. FQU7P06TU

 

FQU7P06TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQU7P06TU

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 28 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 25 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 5.4 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 6.3 nC

Время нарастания (tr): 50 ns

Выходная емкость (Cd): 110 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.451 Ohm

Тип корпуса: I-PAK

Аналог (замена) для FQU7P06TU

 

 

FQU7P06TU Datasheet (PDF)

1.1. fqu7p06tu.pdf Size:707K _fairchild_semi

FQU7P06TU
FQU7P06TU

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially

3.1. fqd7p06 fqu7p06.pdf Size:707K _fairchild_semi

FQU7P06TU
FQU7P06TU

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

 5.1. fqd7p20 fqu7p20.pdf Size:731K _fairchild_semi

FQU7P06TU
FQU7P06TU

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been e

5.2. fqu7p20tu.pdf Size:731K _fairchild_semi

FQU7P06TU
FQU7P06TU

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect • -5.7A, -200V, RDS(on) = 0.69Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technolo

Другие MOSFET... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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