FQU7P06TU Specs and Replacement

Type Designator: FQU7P06TU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.451 Ohm

Package: I-PAK

FQU7P06TU substitution

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FQU7P06TU datasheet

 ..1. Size:707K  fairchild semi
 fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf pdf_icon

FQU7P06TU

May 2001 TM QFET FQD7P06 / FQU7P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially... See More ⇒

 9.1. Size:731K  fairchild semi
 fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf pdf_icon

FQU7P06TU

April 2000 TM QFET QFET QFET QFET FQD7P20 / FQU7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technolo... See More ⇒

Detailed specifications: FQU5N40TU, FQU5N50CTU, FQU5N50TU, FQU5N60CTU, FQU5P20TU, FQU6N40CTU, FQU6P25TU, FQU7N10LTU, IRFP260N, FQU7P20TU, FQU8N25TU, FQU8P10TU, FQU9N25TU, IRF6216PBF, IRF6216PBF-1, IRF6217PBF, IRF6217PBF-1

Keywords - FQU7P06TU MOSFET specs

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