IRF6601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF6601
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 2430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: DIRECTFET

Búsqueda de reemplazo de MOSFET IRF6601

IRF6601 Datasheet (PDF)

..1. Size:265K international rectifier
irf6601.pdf

PD - 94366FIRF6601/IRF6601TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters20V 3.8m@VGS = 10V 30nCl Low Conduction Losses5.0m@VGS = 4.5Vl Low Switching Lossesl Low Profile (

8.1. Size:178K international rectifier
irf6608.pdf

PD - 94727BIRF6608HEXFET Power MOSFETl Application Specific MOSFETsVDSS RDS(on) maxQgl Ideal for CPU Core DC-DC Convertersl Low Conduction Losses30V 9.0m@VGS = 10V 16nCl Low Switching Losses11m@VGS = 4.5Vl Low Profile (

8.2. Size:249K international rectifier
irf6602.pdf

PD - 94363CIRF6602/IRF6602TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETs20V 13m@VGS = 10V 12nCl Ideal for CPU Core DC-DC Converters19m@VGS = 4.5Vl Low Conduction Lossesl Low Switching Lossesl Low Profile (

8.3. Size:52K international rectifier
irf6603.pdf

PD - 94364APROVISIONALIRF6603DirectFETTM Power MOSFET Application Specific MOSFETsVDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters30V 3.9m@VGS = 10V 28A Low Conduction Losses5.5m@VGS = 4.5V 22A High Cdv/dt Immunity Low Profile (

8.4. Size:599K international rectifier
irf6607.pdf

PD - 94574IRF6607HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters30V 3.3m@VGS = 10V 50nCl Low Conduction Losses4.4m@VGS = 4.5Vl High Cdv/dt Immunityl Low Profile (

8.5. Size:201K international rectifier
irf6609.pdf

PD - 95822IRF6609HEXFET Power MOSFETVDSS RDS(on) maxQgl Low Conduction Losses20V 2.0m@VGS = 10V 46nCl Low Switching Losses2.6m@VGS = 4.5Vl Ideal Synchronous Rectifier MOSFETl Low Profile (

8.6. Size:56K international rectifier
irf6604.pdf

PD - 94365PROVISIONALIRF6604DirectFETTM Power MOSFET Application Specific MOSFETsVDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters30V 11.5m@VGS = 7.0V 16A Low Conduction Losses13m@VGS = 4.5V 14A Low Switching Losses Low Profile (

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI2323CDS-T1-GE3 | SI2314

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