IRF6601 Datasheet and Replacement
Type Designator: IRF6601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 2430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: DIRECTFET
IRF6601 substitution
IRF6601 Datasheet (PDF)
irf6601.pdf

PD - 94366FIRF6601/IRF6601TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters20V 3.8m@VGS = 10V 30nCl Low Conduction Losses5.0m@VGS = 4.5Vl Low Switching Lossesl Low Profile (
irf6608.pdf

PD - 94727BIRF6608HEXFET Power MOSFETl Application Specific MOSFETsVDSS RDS(on) maxQgl Ideal for CPU Core DC-DC Convertersl Low Conduction Losses30V 9.0m@VGS = 10V 16nCl Low Switching Losses11m@VGS = 4.5Vl Low Profile (
irf6602.pdf

PD - 94363CIRF6602/IRF6602TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETs20V 13m@VGS = 10V 12nCl Ideal for CPU Core DC-DC Converters19m@VGS = 4.5Vl Low Conduction Lossesl Low Switching Lossesl Low Profile (
irf6603.pdf

PD - 94364APROVISIONALIRF6603DirectFETTM Power MOSFET Application Specific MOSFETsVDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters30V 3.9m@VGS = 10V 28A Low Conduction Losses5.5m@VGS = 4.5V 22A High Cdv/dt Immunity Low Profile (
Datasheet: IRF640SPBF , IRF644N , IRF644NLPBF , IRF644NPBF , IRF644NS , IRF644NSPBF , IRF644PBF , IRF644SPBF , 20N50 , IRF6602 , IRF6628PBF , IRF6629PBF , IRF6633APBF , IRF6638PBF , IRF6645PBF , IRF6724MPBF , IRF6725MPBF .
History: STD3NK50Z | SI9926BDY | KTK5132S | N0302P
Keywords - IRF6601 MOSFET datasheet
IRF6601 cross reference
IRF6601 equivalent finder
IRF6601 lookup
IRF6601 substitution
IRF6601 replacement
History: STD3NK50Z | SI9926BDY | KTK5132S | N0302P



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