IRF6601 MOSFET Datasheet: N-Ch, 20V, 26A. Full specification with pinout and replacement list

IRF6601 Specs and Replacement

Type Designator: IRF6601

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 2430 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: DIRECTFET

IRF6601 substitution

- MOSFET ⓘ Cross-Reference Search

IRF6601 datasheet

..1. Size:265K international rectifier
irf6601.pdf pdf_icon

PD - 94366F IRF6601/IRF6601TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 20V 3.8m @VGS = 10V 30nC l Low Conduction Losses 5.0m @VGS = 4.5V l Low Switching Losses l Low Profile (... See More ⇒

8.1. Size:178K international rectifier
irf6608.pdf pdf_icon

PD - 94727B IRF6608 HEXFET Power MOSFET l Application Specific MOSFETs VDSS RDS(on) max Qg l Ideal for CPU Core DC-DC Converters l Low Conduction Losses 30V 9.0m @VGS = 10V 16nC l Low Switching Losses 11m @VGS = 4.5V l Low Profile (... See More ⇒

8.2. Size:249K international rectifier
irf6602.pdf pdf_icon

PD - 94363C IRF6602/IRF6602TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs 20V 13m @VGS = 10V 12nC l Ideal for CPU Core DC-DC Converters 19m @VGS = 4.5V l Low Conduction Losses l Low Switching Losses l Low Profile (... See More ⇒

8.3. Size:52K international rectifier
irf6603.pdf pdf_icon

PD - 94364A PROVISIONAL IRF6603 DirectFETTM Power MOSFET Application Specific MOSFETs VDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters 30V 3.9m @VGS = 10V 28A Low Conduction Losses 5.5m @VGS = 4.5V 22A High Cdv/dt Immunity Low Profile (... See More ⇒