IRF6601 Datasheet. Specs and Replacement
Type Designator: IRF6601 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 2430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: DIRECTFET
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IRF6601 substitution
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IRF6601 datasheet
irf6601.pdf
PD - 94366F IRF6601/IRF6601TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 20V 3.8m @VGS = 10V 30nC l Low Conduction Losses 5.0m @VGS = 4.5V l Low Switching Losses l Low Profile (... See More ⇒
irf6608.pdf
PD - 94727B IRF6608 HEXFET Power MOSFET l Application Specific MOSFETs VDSS RDS(on) max Qg l Ideal for CPU Core DC-DC Converters l Low Conduction Losses 30V 9.0m @VGS = 10V 16nC l Low Switching Losses 11m @VGS = 4.5V l Low Profile (... See More ⇒
irf6602.pdf
PD - 94363C IRF6602/IRF6602TR1 HEXFET Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs 20V 13m @VGS = 10V 12nC l Ideal for CPU Core DC-DC Converters 19m @VGS = 4.5V l Low Conduction Losses l Low Switching Losses l Low Profile (... See More ⇒
irf6603.pdf
PD - 94364A PROVISIONAL IRF6603 DirectFETTM Power MOSFET Application Specific MOSFETs VDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters 30V 3.9m @VGS = 10V 28A Low Conduction Losses 5.5m @VGS = 4.5V 22A High Cdv/dt Immunity Low Profile (... See More ⇒
Detailed specifications: IRF640SPBF, IRF644N, IRF644NLPBF, IRF644NPBF, IRF644NS, IRF644NSPBF, IRF644PBF, IRF644SPBF, AON7410, IRF6602, IRF6628PBF, IRF6629PBF, IRF6633APBF, IRF6638PBF, IRF6645PBF, IRF6724MPBF, IRF6725MPBF
Keywords - IRF6601 MOSFET specs
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