IRFZ46N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ46N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 88 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 46 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 48 nC
Resistencia drenaje-fuente RDS(on): 0.02 Ohm
Empaquetado / Estuche: TO220AB
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IRFZ46N Datasheet (PDF)
1.1. irfz46nlpbf.pdf 
Size:679K _update
PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t
1.2. irfz46npbf.pdf Size:215K _update
PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
1.3. irfz46n.pdf Size:85K _international_rectifier
PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil
1.4. irfz46ns.pdf Size:149K _international_rectifier
PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr
Otros transistores... IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRF740 , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CHM1012TGP | CHM1012PAGP | CHM1012LPAGP | CHM09N7NGP | CHM09N6NGP | CHM06N5NGP | CHM05P03NGP | CHM05N65PAGP | CHM04N6NGP | CHM0410JGP | CHM02N7PAGP | CHM02N7NGP | CHM02N6PAGP | CHM02N6GPAGP | CHM02N6ANGP |