All MOSFET. IRFZ46N Datasheet

 

IRFZ46N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ46N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 46 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 48 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220AB

IRFZ46N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ46N Datasheet (PDF)

0.1. irfz46ns.pdf Size:149K _international_rectifier

IRFZ46N IRFZ46N

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.0165Ω Fully Avalanche Rated G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to achie

0.2. irfz46n.pdf Size:85K _international_rectifier

IRFZ46N IRFZ46N

PD-91277 IRFZ46N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mΩ G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

 0.3. auirfz46ns.pdf Size:245K _international_rectifier

IRFZ46N IRFZ46N

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching RDS(on) max. 16.5mΩ l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

0.4. irfz46npbf.pdf Size:215K _international_rectifier

IRFZ46N IRFZ46N

PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 0.5. irfz46nlpbf.pdf Size:679K _international_rectifier

IRFZ46N IRFZ46N

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

Datasheet: IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRF740 , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S .

 

 
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