IRFZ46N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ46N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 46 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 48 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220AB

IRFZ46N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ46N Datasheet (PDF)

1.1. irfz46npbf.pdf Size:215K _update

PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

1.2. irfz46nlpbf.pdf Size:679K _update

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

1.3. irfz46ns.pdf Size:149K _international_rectifier

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.0165Ω Fully Avalanche Rated G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to achie

1.4. irfz46n.pdf Size:85K _international_rectifier

PD-91277 IRFZ46N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mΩ G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

1.5. auirfz46ns.pdf Size:245K _international_rectifier

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching RDS(on) max. 16.5mΩ l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

1.6. irfz46npbf.pdf Size:215K _international_rectifier

1.7. irfz46nlpbf.pdf Size:679K _international_rectifier

1.8. irfz46ns.pdf Size:258K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFZ46NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

1.9. irfz46n.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46N， IIRFZ46N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

Datasheet: IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRF740 , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S .

LIST

Last Update

All MOSFET. IRFZ46N Datasheet

IRFZ46N MOSFET. Datasheet pdf. Equivalent

IRFZ46N Datasheet (PDF)

LIST

Last Update

AllTransistors(C)2015