Справочник MOSFET. IRFZ46N

 

IRFZ46N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ46N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 88 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Максимально допустимый постоянный ток стока (Id): 46 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 48 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRFZ46N

 

 

IRFZ46N Datasheet (PDF)

1.1. irfz46ns.pdf Size:149K _international_rectifier

IRFZ46N
IRFZ46N

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.0165Ω Fully Avalanche Rated G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to achie

1.2. irfz46n.pdf Size:85K _international_rectifier

IRFZ46N
IRFZ46N

PD-91277 IRFZ46N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mΩ G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

 1.3. auirfz46ns.pdf Size:245K _international_rectifier

IRFZ46N
IRFZ46N

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching RDS(on) max. 16.5mΩ l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

1.4. irfz46npbf.pdf Size:215K _international_rectifier

IRFZ46N
IRFZ46N

PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 1.5. irfz46nlpbf.pdf Size:679K _international_rectifier

IRFZ46N
IRFZ46N

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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