SD202DC Todos los transistores

 ..1. Size:26K  calogic
 sd200dc sd201dc sd202dc sd203dc sstsd201 sstsd203.pdf

High-Speed Analog N-Channel Enhancement-Mode LLC DMOS FETS SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 FEATURES DESCRIPTION High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz The SD200 series is manufactured utilizing Calogic s Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz proprietary DMOS design and processing techniques

 9.1. Size:91K  sanyo
 2sd2028.pdf

Ordering number EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions With Zener diode (11 3V) between collector and unit mm base. 2018B Large current capacity. [2SD2028] Low collector-to-emitter saturation voltage. 0.4 Ultrasmall-sized package permitting the 2SD2028- 0.16 3 applied sets to

 9.2. Size:371K  samsung
 ssd2021.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2021 30V 0.05 5.0A N -Channel MOSFET Absolute Maximum

 9.3. Size:363K  samsung
 ssd2025.pdf

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2025 60V 0.10 3.3A N -Channel MOSFET Absolute Maximum

 9.4. Size:54K  panasonic
 2sd2029.pdf

Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1347 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio amplifie

 9.5. Size:1107K  kexin
 2sd2028.pdf

SMD Type Transistors NPN Transistors 2SD2028 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=700mA Collector Emitter Voltage VCEO=8V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage (Note.1) VCBO 8

 9.6. Size:209K  inchange semiconductor
 2sd2024.pdf

isc Silicon NPN Darlington Power Transistor 2SD2024 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.7. Size:209K  inchange semiconductor
 2sd2027.pdf

isc Silicon NPN Power Transistor 2SD2027 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXI

 9.8. Size:180K  inchange semiconductor
 2sd2021.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2021 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS

 9.9. Size:182K  inchange semiconductor
 2sd2020.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2020 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS

 9.10. Size:209K  inchange semiconductor
 2sd2023.pdf

isc Silicon NPN Power Transistor 2SD2023 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Low Collector Saturation Voltage V = 1.5V(Max)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 9.11. Size:187K  inchange semiconductor
 2sd2022.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2022 DESCRIPTION High DC Current Gain- h = 3000(Min)@ I = 1A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency amplification

 9.12. Size:212K  inchange semiconductor
 2sd2025.pdf

isc Silicon NPN Darlington Power Transistor 2SD2025 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1344 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RA

 9.13. Size:216K  inchange semiconductor
 2sd2029.pdf

isc Silicon NPN Power Transistor 2SD2029 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1347 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS