SD202DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

High-Speed AnalogN-Channel Enhancement-ModeLLCDMOS FETSSD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203FEATURES DESCRIPTION High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz The SD200 series is manufactured utilizing Calogics Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz proprietary DMOS design and processing techniques

Ordering number:EN2803NPN Epitaxial Planar Silicon Transistor2SD2028Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions With Zener diode (11 3V) between collector andunit:mmbase.2018B Large current capacity.[2SD2028] Low collector-to-emitter saturation voltage.0.4 Ultrasmall-sized package permitting the 2SD2028- 0.163applied sets to

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2021 30V 0.05 5.0AN -Channel MOSFETAbsolute Maximum

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2025 60V 0.10 3.3AN -Channel MOSFETAbsolute Maximum

Power Transistors2SD2029Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB1347 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio amplifie

SMD Type TransistorsNPN Transistors2SD2028SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=700mA Collector Emitter Voltage VCEO=8V 1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage (Note.1) VCBO 8

isc Silicon NPN Darlington Power Transistor 2SD2024DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistor 2SD2027DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2021DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RATINGS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2020DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD2023DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 1.5V(Max)@I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2022DESCRIPTIONHigh DC Current Gain-: h = 3000(Min)@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency amplification

isc Silicon NPN Darlington Power Transistor 2SD2025DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1344Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD2029DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1347Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATINGS