IRFZ46NS Todos los transistores

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.0165 Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achie

IRFZ46NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source

isc N-Channel MOSFET Transistor IRFZ46NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175 C Operating Temperature l Fast Switching RDS(on) max. 16.5m l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175 C Operating Temperature l Fast Switching RDS(on) max. 16.5m l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 16.5m G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

PD - 94952A IRFZ46NPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 16.5m G l Fully Avalanche Rated l Lead-Free ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165 Lead-Free G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing t

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46N IIRFZ46N FEATURES Static drain-source on-resistance RDS(on) 16.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM