IRFZ46NS MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ46NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 53 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 48 nC
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: D2PAK
IRFZ46NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ46NS Datasheet (PDF)
1.1. irfz46ns.pdf 
Size:149K _international_rectifier
PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr
3.1. irfz46nlpbf.pdf Size:679K _update
PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t
3.2. irfz46npbf.pdf Size:215K _update
PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
3.3. irfz46n.pdf Size:85K _international_rectifier
PD-91277 IRFZ46N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil
Datasheet: IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRF840 , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S , IRL2203N , IRL2203NL .
