Справочник MOSFET. IRFZ46NS

 

IRFZ46NS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFZ46NS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 107 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 53 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 72(max) nC
   trⓘ - Время нарастания: 76 ns
   Cossⓘ - Выходная емкость: 407 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0165 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRFZ46NS

 

 

IRFZ46NS Datasheet (PDF)

 ..1. Size:149K  international rectifier
irfz46ns irfz46nl.pdf

IRFZ46NS
IRFZ46NS

PD - 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie

 ..2. Size:856K  cn vbsemi
irfz46ns.pdf

IRFZ46NS
IRFZ46NS

IRFZ46NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

 ..3. Size:258K  inchange semiconductor
irfz46ns.pdf

IRFZ46NS
IRFZ46NS

isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 0.1. Size:245K  international rectifier
auirfz46ns.pdf

IRFZ46NS
IRFZ46NS

PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi

 7.1. Size:245K  international rectifier
auirfz46nl.pdf

IRFZ46NS
IRFZ46NS

PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi

 7.2. Size:85K  international rectifier
irfz46n.pdf

IRFZ46NS
IRFZ46NS

PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

 7.3. Size:215K  international rectifier
irfz46npbf.pdf

IRFZ46NS
IRFZ46NS

PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

 7.4. Size:679K  international rectifier
irfz46nlpbf.pdf

IRFZ46NS
IRFZ46NS

PD - 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t

 7.5. Size:215K  infineon
irfz46npbf.pdf

IRFZ46NS
IRFZ46NS

PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

 7.6. Size:246K  inchange semiconductor
irfz46n.pdf

IRFZ46NS
IRFZ46NS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

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