IRL1004L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL1004L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente (Vds): 40 V
Tensión compuerta-fuente (Vgs): 16 V
Corriente continua de drenaje (Id): 110 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1 V
Carga de compuerta (Qg): 66.7 nC
Resistencia drenaje-fuente RDS(on): 0.0065 Ohm
Empaquetado / Estuche: TO262
Búsqueda de reemplazo de MOSFET IRL1004L
IRL1004L Datasheet (PDF)
1.1. irl1004lpbf irl1004spbf.pdf 
Size:210K _upd
PD - 95575 IRL1004SPbF IRL1004LPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.0065Ω l Fully Avalanche Rated G l Lead-Free ID = 130A… Description S Fifth Generation HEXFET® power MOSFETs from International Rectifier u
3.1. irl1004pbf.pdf Size:159K _upd
PD - 95403 IRL1004PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 40V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.0065Ω l Fast Switching G l Fully Avalanche Rated ID = 130A… l Lead-Free S Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced
3.2. irl1004.pdf Size:89K _international_rectifier
PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065? 175C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achie
3.3. irl1004s.pdf Size:123K _international_rectifier
PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.0065? G Fully Avalanche Rated Description ID = 130A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniqu
Otros transistores... IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , 2N7000 , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS , IRL2505 , IRL2505L , IRL2505S , IRL2703 .
