IRL1004L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1004L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 110 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 66.7 nC

Resistencia drenaje-fuente RDS(on): 0.0065 Ohm

Empaquetado / Estuche: TO262

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IRL1004L Datasheet (PDF)

1.1. irl1004lpbf irl1004spbf.pdf Size:210K _upd

PD - 95575 IRL1004SPbF IRL1004LPbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.0065Ω l Fully Avalanche Rated G l Lead-Free ID = 130A… Description S Fifth Generation HEXFET® power MOSFETs from International Rectifier u

3.1. irl1004pbf.pdf Size:159K _upd

PD - 95403 IRL1004PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 40V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 0.0065Ω l Fast Switching G l Fully Avalanche Rated ID = 130A… l Lead-Free S Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced

3.2. irl1004.pdf Size:89K _international_rectifier

PD - 91702B IRL1004 HEXFET� Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065? 175�C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET� power MOSFETs from International Rectifier utilize advanced processing techniques to achie

3.3. irl1004s.pdf Size:123K _international_rectifier

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive HEXFET� Power MOSFET Advanced Process Technology Ultra Low On-Resistance D VDSS = 40V Dynamic dv/dt Rating 175�C Operating Temperature Fast Switching RDS(on) = 0.0065? G Fully Avalanche Rated Description ID = 130A S Fifth Generation HEXFET� power MOSFETs from International Rectifier utilize advanced processing techniqu

Otros transistores... IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , 2N7000 , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS , IRL2505 , IRL2505L , IRL2505S , IRL2703 .

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