IRL1004L Datasheet. Specs and Replacement

Type Designator: IRL1004L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 1480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO262

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IRL1004L datasheet

 ..1. Size:210K  international rectifier
 irl1004lpbf irl1004spbf.pdf pdf_icon

IRL1004L

PD - 95575 IRL1004SPbF IRL1004LPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.0065 l Fully Avalanche Rated G l Lead-Free ID = 130A Description S Fifth Generation HEXFET power MOSFETs from International Rectifier u... See More ⇒

 ..2. Size:123K  international rectifier
 irl1004s irl1004l.pdf pdf_icon

IRL1004L

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.0065 G Fully Avalanche Rated Description ID = 130A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing ... See More ⇒

 7.1. Size:89K  international rectifier
 irl1004.pdf pdf_icon

IRL1004L

PD - 91702B IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.0065 175 C Operating Temperature G Fast Switching ID = 130A Fully Avalanche Rated S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques ... See More ⇒

 7.2. Size:159K  international rectifier
 irl1004pbf.pdf pdf_icon

IRL1004L

PD - 95403 IRL1004PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D VDSS = 40V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 0.0065 l Fast Switching G l Fully Avalanche Rated ID = 130A l Lead-Free S Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced... See More ⇒

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Detailed specifications: IRFZ45, IRFZ46N, IRFZ46NL, IRFZ46NS, IRFZ48N, IRFZ48NL, IRFZ48NS, IRL1004, IRFZ44, IRL1004S, IRL2203N, IRL2203NL, IRL2203NS, IRL2505, IRL2505L, IRL2505S, IRL2703

Keywords - IRL1004L MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs