SIA430DJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIA430DJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 12
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10
nS
Cossⓘ - Capacitancia
de salida: 200
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135
Ohm
Paquete / Cubierta: SC-70-6L
Búsqueda de reemplazo de SIA430DJ MOSFET
-
Selección ⓘ de transistores por parámetros
SIA430DJ PDF Specs
..1. Size:222K vishay
sia430dj.pdf 
New Product SiA430DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET New Thermally Enhanced PowerPAK RoHS 0.0135 at VGS = 10 V 12a COMPLIANT 20 5.3 nC SC-70 Package 0.0185 at VGS = 4.5 V 10.8 - Small Footprint Area APPLICATIONS Load Switch PowerPAK ... See More ⇒
0.1. Size:227K vishay
sia430djt.pdf
SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) b, c Qg (Typ.) Thermally enhanced PowerPAK SC-70 package 0.0135 at VGS = 10 V 12 a 20 5.3 nC - Small footprint area 0.0185 at VGS = 4.5 V 10.8 - Ultra-thin 0.6 mm height 100 % Rg tested Thin PowerPAK SC-70-6L Si... See More ⇒
9.1. Size:216K vishay
sia431dj.pdf
New Product SiA431DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK 0.025 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area 0.031 at VGS = - 2.5 V - 12a - Low On-Resistance - 20 24 nC 0.041 at VGS = - 1.8 V - 12a 100 % Rg Tested 0... See More ⇒
9.2. Size:253K vishay
sia437dj.pdf
SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) a Qg (Typ.) Thermally enhanced PowerPAK SC-70 package 0.0145 at VGS = -4.5 V -29.7 - Small footprint area 0.0205 at VGS = -2.5 V -25 -20 28 nC - Low On-Resistance 0.0330 at VGS = -1.8 V -19.7 0.0650 at VGS = -1.5 V -4 ... See More ⇒
9.3. Size:192K vishay
sia438ed.pdf
New Product SiA438EDJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK 6 20 3.5 nC SC-70 Package 0.063 at VGS = 2.5 V 6 - Small Footprint Area - Low On-Resistance Typical ESD Pr... See More ⇒
9.4. Size:120K vishay
sia432dj.pdf
New Product SiA432DJ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET New Thermally Enhanced PowerPAK 0.020 at VGS = 10 V RoHS 10.1 COMPLIANT 30 5.6 SC-70 Package 0.024 at VGS = 4.5 V 9.2 - Small Footprint Area APPLICATIONS Load Switch PowerPAK SC-70-... See More ⇒
9.5. Size:194K vishay
sia438edj.pdf
New Product SiA438EDJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK 6 20 3.5 nC SC-70 Package 0.063 at VGS = 2.5 V 6 - Small Footprint Area - Low On-Resistance Typical ESD Pr... See More ⇒
9.6. Size:209K vishay
sia439edj.pdf
SiA439EDJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.0165 at VGS = - 4.5 V - 28 - Small Footprint Area 0.0180 at VGS = - 3.7 V - 27 - Low On-Resistance - 20 26.7 nC 0.0235 at VGS = - 2.5 V - 23 100 % Rg and UIS ... See More ⇒
9.7. Size:214K vishay
sia436dj.pdf
New Product SiA436DJ Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0094 at VGS = 4.5 V 12 Thermally Enhanced PowerPAK SC-70 Package 0.0105 at VGS = 2.5 V 12 - Small Footprint Area 0.0125 at VGS = 1.8 V 8 12 15... See More ⇒
9.8. Size:223K vishay
sia433edj.pdf
New Product SiA433EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.018 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET New Thermally Enhanced PowerPAK 0.026 at VGS = - 2.5 V - 20 - 12a 20 nC SC-70 Package 0.065 at VGS = - 1.8 V - 4 - Small Fo... See More ⇒
9.9. Size:221K vishay
sia433ed.pdf
New Product SiA433EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.018 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET New Thermally Enhanced PowerPAK 0.026 at VGS = - 2.5 V - 20 - 12a 20 nC SC-70 Package 0.065 at VGS = - 1.8 V - 4 - Small Fo... See More ⇒
9.10. Size:1110K cn vbsemi
sia433edj.pdf
SIA433EDJ www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2 Package 0.030 at VGS = - 4.5 V -10a - 20 18 nC - Small Footprint Area 0.040 at VGS = - 2.5 V -9a - Low On-Resistance APPLICATIONS Load Switch, PA Switch, and Battery Switch for Portable Devi... See More ⇒
Otros transistores... SIA418DJ
, SIA419DJ
, SIA421DJ
, SIA425EDJ
, SIA426DJ
, SIA427ADJ
, SIA427DJ
, SIA429DJT
, IRF1407
, SIA430DJT
, SIA431DJ
, SIA432DJ
, SIA433EDJ
, SIA436DJ
, SIA437DJ
, SIA438EDJ
, SIA439EDJ
.
