All MOSFET. SIA430DJ Datasheet

 

SIA430DJ Datasheet and Replacement


   Type Designator: SIA430DJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SC-70-6L
 

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SIA430DJ Datasheet (PDF)

 ..1. Size:222K  vishay
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SIA430DJ

New ProductSiA430DJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET New Thermally Enhanced PowerPAK RoHS0.0135 at VGS = 10 V 12aCOMPLIANT20 5.3 nCSC-70 Package0.0185 at VGS = 4.5 V 10.8- Small Footprint AreaAPPLICATIONS Load SwitchPowerPAK

 0.1. Size:227K  vishay
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SIA430DJ

SiA430DJTwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) b, c Qg (Typ.) Thermally enhanced PowerPAK SC-70 package0.0135 at VGS = 10 V 12 a20 5.3 nC - Small footprint area0.0185 at VGS = 4.5 V 10.8 - Ultra-thin 0.6 mm height 100 % Rg testedThin PowerPAK SC-70-6L Si

 9.1. Size:216K  vishay
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SIA430DJ

New ProductSiA431DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK0.025 at VGS = - 4.5 V SC-70 Package- 12a- Small Footprint Area0.031 at VGS = - 2.5 V - 12a- Low On-Resistance- 20 24 nC0.041 at VGS = - 1.8 V - 12a 100 % Rg Tested0

 9.2. Size:253K  vishay
sia437dj.pdf pdf_icon

SIA430DJ

SiA437DJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () (Max.) ID (A) a Qg (Typ.) Thermally enhanced PowerPAK SC-70 package0.0145 at VGS = -4.5 V -29.7- Small footprint area0.0205 at VGS = -2.5 V -25-20 28 nC- Low On-Resistance0.0330 at VGS = -1.8 V -19.70.0650 at VGS = -1.5 V -4

Datasheet: SIA418DJ , SIA419DJ , SIA421DJ , SIA425EDJ , SIA426DJ , SIA427ADJ , SIA427DJ , SIA429DJT , P0903BDG , SIA430DJT , SIA431DJ , SIA432DJ , SIA433EDJ , SIA436DJ , SIA437DJ , SIA438EDJ , SIA439EDJ .

History: SSF3615 | TMU3N40ZG | MMBF5103 | STP11NM60FD | BSS84LT1 | PQ6S2JN | VS3602GPMT

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