IRL3302 Todos los transistores

PD 9.1696A IRL3302 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters 150 C Operating Temperature RDS(on) = 0.020W Fast Switching G Description ID = 39A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Adv

PD- 95587 IRL3302SPbF HEXFET Power MOSFET D VDSS = 20V RDS(on) = 0.020 G Lead-Free S ID = 39A www.irf.com 1 07/20/04 IRL3302SPbF 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com IRL3302SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Induct

PD - 9.1692A IRL3302S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.020W Fast Switching G ID = 39A S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques

PD - 95578 IRL3303LPbF IRL3303SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRL3303S) VDSS = 30V l Low-profile through-hole (IRL3303L) l 175 C Operating Temperature RDS(on) = 0.026 l Fast Switching G l Fully Avalanche Rated ID = 38A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utili

PD - 9.1323B IRL3303S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175 C Operating Temperature RDS(on) = 0.026 Fast Switching G Fully Avalanche Rated ID = 38A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

PD - 9.1322B IRL3303 HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.026 Fast Switching G Fully Avalanche Rated ID = 38A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistan

PD - 94887 IRL3303PbF HEXFET Power MOSFET Lead-Free www.irf.com 1 12/11/03 IRL3303PbF 2 www.irf.com IRL3303PbF www.irf.com 3 IRL3303PbF 4 www.irf.com IRL3303PbF www.irf.com 5 IRL3303PbF 6 www.irf.com IRL3303PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T Low Stray Inductance Ground Plane Low Leakage Inductance