IRL3302 Datasheet. Specs and Replacement

Type Designator: IRL3302  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO220

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IRL3302 datasheet

 ..1. Size:88K  international rectifier
 irl3302.pdf pdf_icon

IRL3302

PD 9.1696A IRL3302 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters 150 C Operating Temperature RDS(on) = 0.020W Fast Switching G Description ID = 39A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Adv... See More ⇒

 0.1. Size:323K  international rectifier
 irl3302spbf.pdf pdf_icon

IRL3302

PD- 95587 IRL3302SPbF HEXFET Power MOSFET D VDSS = 20V RDS(on) = 0.020 G Lead-Free S ID = 39A www.irf.com 1 07/20/04 IRL3302SPbF 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com IRL3302SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Induct... See More ⇒

 0.2. Size:129K  international rectifier
 irl3302s.pdf pdf_icon

IRL3302

PD - 9.1692A IRL3302S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.020W Fast Switching G ID = 39A S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques ... See More ⇒

 8.1. Size:292K  international rectifier
 irl3303lpbf irl3303spbf.pdf pdf_icon

IRL3302

PD - 95578 IRL3303LPbF IRL3303SPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRL3303S) VDSS = 30V l Low-profile through-hole (IRL3303L) l 175 C Operating Temperature RDS(on) = 0.026 l Fast Switching G l Fully Avalanche Rated ID = 38A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utili... See More ⇒

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Detailed specifications: IRL3103D1, IRL3103D1S, IRL3103D2, IRL3103L, IRL3103S, IRL3202, IRL3202S, IRL3215, IRFP064N, IRL3302S, IRL3303, IRL3303L, IRL3303S, IRL3402, IRL3402S, IRL3502, IRL3502S

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