IRL3302 - Даташиты. Аналоги. Основные параметры

PD 9.1696AIRL3302PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters 150C Operating TemperatureRDS(on) = 0.020W Fast SwitchingGDescriptionID = 39AThese HEXFET Power MOSFETs were designed Sspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Adv

PD- 95587IRL3302SPbFHEXFET Power MOSFETDVDSS = 20VRDS(on) = 0.020G Lead-FreeSID = 39Awww.irf.com 107/20/04IRL3302SPbF2 www.irf.comIRL3302SPbFwww.irf.com 3IRL3302SPbF4 www.irf.comIRL3302SPbFwww.irf.com 5IRL3302SPbF6 www.irf.comIRL3302SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Induct

PD - 9.1692AIRL3302SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.020W Fast SwitchingGID = 39ASDescriptionThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters. Advanced processing techniques

PD - 95578IRL3303LPbFIRL3303SPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRL3303S)VDSS = 30Vl Low-profile through-hole (IRL3303L)l 175C Operating TemperatureRDS(on) = 0.026l Fast SwitchingGl Fully Avalanche RatedID = 38Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutili

PD - 9.1323BIRL3303S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 30V Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175C Operating Temperature RDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

PD - 9.1322BIRL3303HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 38ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

PD - 94887IRL3303PbFHEXFET Power MOSFET Lead-Freewww.irf.com 112/11/03IRL3303PbF2 www.irf.comIRL3303PbFwww.irf.com 3IRL3303PbF4 www.irf.comIRL3303PbFwww.irf.com 5IRL3303PbF6 www.irf.comIRL3303PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout ConsiderationsD.U.T Low Stray Inductance Ground Plane Low Leakage Inductance