IRL3502S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL3502S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IRL3502S MOSFET
IRL3502S datasheet
irl3502s.pdf
PD -9.1676A IRL3502S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.007W Fast Switching G ID = 110A Description S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced
irl3502.pdf
PD 9.1698A IRL3502 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V-7.0V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters Fast Switching RDS(on) = 0.007 G ID = 110A Description S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with
irl3502pbf.pdf
PD - 94879 IRL3502PbF HEXFET Power MOSFET l Advanced Process Technology D l Optimized for 4.5V-7.0V Gate Drive VDSS = 20V l Ideal for CPU Core DC-DC Converters l Fast Switching RDS(on) = 0.007 l Lead-Free G ID = 110A Description S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced proce
Otros transistores... IRL3302 , IRL3302S , IRL3303 , IRL3303L , IRL3303S , IRL3402 , IRL3402S , IRL3502 , K4145 , IRL3705N , IRL3705NL , IRL3705NS , IRL3803 , IRL3803L , IRL3803S , IRL510 , IRL510A .
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