IRL3502S Datasheet and Replacement
Type Designator: IRL3502S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 1900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
IRL3502S substitution
IRL3502S Datasheet (PDF)
irl3502s.pdf

PD -9.1676AIRL3502SPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface MountVDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC ConvertersRDS(on) = 0.007W Fast SwitchingGID = 110A Description SThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advanced
irl3502.pdf

PD 9.1698AIRL3502PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Optimized for 4.5V-7.0V Gate DriveVDSS = 20V Ideal for CPU Core DC-DC Converters Fast SwitchingRDS(on) = 0.007GID = 110A DescriptionSThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters. Advanced processing techniquescombined with
irl3502pbf.pdf

PD - 94879IRL3502PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V-7.0V Gate DriveVDSS = 20Vl Ideal for CPU Core DC-DC Convertersl Fast SwitchingRDS(on) = 0.007l Lead-FreeGID = 110ADescriptionSThese HEXFET Power MOSFETs were designedspecifically to meet the demands of CPU core DC-DCconverters in the PC environment. Advancedproce
Datasheet: IRL3302 , IRL3302S , IRL3303 , IRL3303L , IRL3303S , IRL3402 , IRL3402S , IRL3502 , IRFB3607 , IRL3705N , IRL3705NL , IRL3705NS , IRL3803 , IRL3803L , IRL3803S , IRL510 , IRL510A .
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