SIHF510S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHF510S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 81 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm

Encapsulados: TO-263

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SIHF510S datasheet

 ..1. Size:196K  vishay
 irf510strlpbf irf510strrpbf sihf510s.pdf pdf_icon

SIHF510S

IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.3 175 C Operating Temperature Qgd (nC) 3.8 Fast Switching Ea

 ..2. Size:210K  vishay
 irf510s sihf510s.pdf pdf_icon

SIHF510S

IRF510S, SiHF510S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G 175 C operating temperature Available Fast switching Ease of paralleling D G Material categorization for definitions of compliance S S please see www.

 7.1. Size:201K  vishay
 irf510pbf sihf510.pdf pdf_icon

SIHF510S

IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli

 7.2. Size:279K  vishay
 irf510 sihf510.pdf pdf_icon

SIHF510S

IRF510, SiHF510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 100 Available Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.54 175 C operating temperature Available Qg max. (nC) 8.3 Fast switching Qgs (nC) 2.3 Ease of paralleling Qgd (nC) 3.8 Simple drive requirements Configuration Single

MOSTRAR MÁS

Otros transistores... IRF7580M, IRF7601PBF, IRF7603PBF, SIHF22N65E, SIHF23N60E, SIHF28N60EF, SIHF30N60E, SIHF510, IRFP260N, SIHF520, SIHF520S, SIHF530, SIHF530S, SIHF540, SIHF540S, SIHF5N50D, SIHF610