SIHF510S Datasheet. Specs and Replacement

Type Designator: SIHF510S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO-263

SIHF510S substitution

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SIHF510S datasheet

 ..1. Size:196K  vishay
 irf510strlpbf irf510strrpbf sihf510s.pdf pdf_icon

SIHF510S

IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.3 175 C Operating Temperature Qgd (nC) 3.8 Fast Switching Ea... See More ⇒

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 irf510s sihf510s.pdf pdf_icon

SIHF510S

IRF510S, SiHF510S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel D2PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G 175 C operating temperature Available Fast switching Ease of paralleling D G Material categorization for definitions of compliance S S please see www.... See More ⇒

 7.1. Size:201K  vishay
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SIHF510S

IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 Fast Switching Qgs (nC) 2.3 Ease of Paralleling Qgd (nC) 3.8 Simple Drive Requirements Configuration Single Compli... See More ⇒

 7.2. Size:279K  vishay
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SIHF510S

IRF510, SiHF510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 100 Available Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.54 175 C operating temperature Available Qg max. (nC) 8.3 Fast switching Qgs (nC) 2.3 Ease of paralleling Qgd (nC) 3.8 Simple drive requirements Configuration Single ... See More ⇒

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Detailed specifications: IRF7580M, IRF7601PBF, IRF7603PBF, SIHF22N65E, SIHF23N60E, SIHF28N60EF, SIHF30N60E, SIHF510, IRFP260N, SIHF520, SIHF520S, SIHF530, SIHF530S, SIHF540, SIHF540S, SIHF5N50D, SIHF610

Keywords - SIHF510S MOSFET specs

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