SIHFB13N50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFB13N50A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 81 nC
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET SIHFB13N50A
SIHFB13N50A Datasheet (PDF)
irfb13n50a sihfb13n50a.pdf
IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio
irfb13n50a irfb13n50apbf sihfb13n50a.pdf
IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio
irfb13n50a sihfb13n50a.pdf
IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.450RoHS*Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANTQgs (nC) 20Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration
irfb17n50l irfb17n50lpbf sihfb17n50l.pdf
IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo
irfb11n50a sihfb11n50a.pdf
IRFB11N50A, SiHFB11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 52COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 18Avalanche Voltage and currentConfi
irfb18n50k sihfb18n50k.pdf
IRFB18N50K, SiHFB18N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 120COMPLIANTRuggednessQgs (nC) 34 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentCon
irfb17n50l sihfb17n50l.pdf
IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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