SIHFB13N50A Datasheet. Specs and Replacement

Type Designator: SIHFB13N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO-220AB

SIHFB13N50A substitution

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SIHFB13N50A datasheet

 ..1. Size:201K  vishay
 irfb13n50a sihfb13n50a.pdf pdf_icon

SIHFB13N50A

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio... See More ⇒

 ..2. Size:201K  vishay
 irfb13n50a irfb13n50apbf sihfb13n50a.pdf pdf_icon

SIHFB13N50A

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio... See More ⇒

 ..3. Size:156K  infineon
 irfb13n50a sihfb13n50a.pdf pdf_icon

SIHFB13N50A

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Available Reqirements RDS(on) ( )VGS = 10 V 0.450 RoHS* Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qgs (nC) 20 Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration... See More ⇒

 8.1. Size:211K  vishay
 irfb17n50l irfb17n50lpbf sihfb17n50l.pdf pdf_icon

SIHFB13N50A

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co... See More ⇒

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Detailed specifications: SIHF9Z22, SIHF9Z24, SIHF9Z24L, SIHF9Z24S, SIHF9Z30, SIHF9Z34, SIHF9Z34L, SIHF9Z34S, IRFB4110, SIHFB17N50L, SIHFB9N60A, SIHFB9N65A, SIHFBC20, SIHFBC20L, SIHFBC20S, SIHFBC30, SIHFBC30A

Keywords - SIHFB13N50A MOSFET specs

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