All MOSFET. SIHFB13N50A Datasheet

 

SIHFB13N50A Datasheet and Replacement


   Type Designator: SIHFB13N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO-220AB
 

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SIHFB13N50A Datasheet (PDF)

 ..1. Size:201K  vishay
 irfb13n50a sihfb13n50a.pdf pdf_icon

SIHFB13N50A

IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

 ..2. Size:201K  vishay
 irfb13n50a irfb13n50apbf sihfb13n50a.pdf pdf_icon

SIHFB13N50A

IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio

 ..3. Size:156K  infineon
 irfb13n50a sihfb13n50a.pdf pdf_icon

SIHFB13N50A

IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.450RoHS*Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANTQgs (nC) 20Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration

 8.1. Size:211K  vishay
 irfb17n50l irfb17n50lpbf sihfb17n50l.pdf pdf_icon

SIHFB13N50A

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

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Datasheet: SIHF9Z22 , SIHF9Z24 , SIHF9Z24L , SIHF9Z24S , SIHF9Z30 , SIHF9Z34 , SIHF9Z34L , SIHF9Z34S , IRF640N , SIHFB17N50L , SIHFB9N60A , SIHFB9N65A , SIHFBC20 , SIHFBC20L , SIHFBC20S , SIHFBC30 , SIHFBC30A .

History: SVG105R4NSTR | FQB2N90TM | MTP3055V | SSF2610E | AP4P016P | TPCA8027-H | OSG60R380AF

Keywords - SIHFB13N50A MOSFET datasheet

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