SIHFB13N50A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFB13N50A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 250 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 81 nC
Время нарастания (tr): 39 ns
Выходная емкость (Cd): 290 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.45 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для SIHFB13N50A
SIHFB13N50A Datasheet (PDF)
irfb13n50a sihfb13n50a.pdf
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IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio
irfb13n50a irfb13n50apbf sihfb13n50a.pdf
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IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500Reqirements AvailableRDS(on) ()VGS = 10 V 0.450RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 81COMPLIANTRuggedness Qgs (nC) 20Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguratio
irfb13n50a sihfb13n50a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IRFB13N50A, SiHFB13N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500AvailableReqirementsRDS(on) ()VGS = 10 V 0.450RoHS*Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANTQgs (nC) 20Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche VoltageConfiguration
irfb17n50l irfb17n50lpbf sihfb17n50l.pdf
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IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo
irfb11n50a sihfb11n50a.pdf
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IRFB11N50A, SiHFB11N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 52COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 18Avalanche Voltage and currentConfi
irfb18n50k sihfb18n50k.pdf
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IRFB18N50K, SiHFB18N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 120COMPLIANTRuggednessQgs (nC) 34 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentCon
irfb17n50l sihfb17n50l.pdf
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IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBFB165R04