SIHFBC30 Datasheet. Equivalente

 ..1. Size:1805K  vishay
 irfbc30 sihfbc30.pdf

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 ..2. Size:1808K  vishay
 irfbc30pbf sihfbc30.pdf

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 ..3. Size:1757K  infineon
 irfbc30 sihfbc30.pdf

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE

 0.1. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur

 0.2. Size:261K  vishay
 irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca

 0.3. Size:290K  vishay
 sihfbc30l sihfbc30s.pdf

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 0.4. Size:264K  vishay
 irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs

 0.5. Size:215K  vishay
 irfbc30a sihfbc30a.pdf

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur

 0.6. Size:285K  vishay
 sihfbc30al sihfbc30as.pdf

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 23 Requirement Qgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterized Ca