SIHFBC30 Todos los transistores

 

SIHFBC30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHFBC30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO-220AB
 

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SIHFBC30 Datasheet (PDF)

 ..1. Size:1805K  vishay
 irfbc30 sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 ..2. Size:1808K  vishay
 irfbc30pbf sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 ..3. Size:1757K  infineon
 irfbc30 sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 0.1. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf pdf_icon

SIHFBC30

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

MOSTRAR MÁS

Otros transistores... SIHF9Z34S , SIHFB13N50A , SIHFB17N50L , SIHFB9N60A , SIHFB9N65A , SIHFBC20 , SIHFBC20L , SIHFBC20S , P55NF06 , SIHFBC30A , SIHFBC30AL , SIHFBC30AS , SIHFBC30L , SIHFBC30S , SIHFBC40 , SIHFBC40A , SIHFBC40AS .

History: DMN2028UFDH | PMPB100ENE | HGW195N15S | IPW60R125CP | PMN30XP | STP28N60M2 | IPP70N04S4-06

 

 
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