Справочник MOSFET. SIHFBC30

 

SIHFBC30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFBC30
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 31 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 86 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для SIHFBC30

 

 

SIHFBC30 Datasheet (PDF)

 ..1. Size:1805K  vishay
irfbc30 sihfbc30.pdf

SIHFBC30
SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 ..2. Size:1808K  vishay
irfbc30pbf sihfbc30.pdf

SIHFBC30
SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 ..3. Size:1757K  infineon
irfbc30 sihfbc30.pdf

SIHFBC30
SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 0.1. Size:216K  vishay
irfbc30apbf sihfbc30a.pdf

SIHFBC30
SIHFBC30

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 0.2. Size:261K  vishay
irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf

SIHFBC30
SIHFBC30

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

 0.3. Size:290K  vishay
sihfbc30l sihfbc30s.pdf

SIHFBC30
SIHFBC30

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs

 0.4. Size:264K  vishay
irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf

SIHFBC30
SIHFBC30

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S)RDS(on) ()VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt RatingQgs

 0.5. Size:215K  vishay
irfbc30a sihfbc30a.pdf

SIHFBC30
SIHFBC30

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 0.6. Size:285K  vishay
sihfbc30al sihfbc30as.pdf

SIHFBC30
SIHFBC30

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

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