All MOSFET. SIHFBC30 Datasheet

 

SIHFBC30 Datasheet and Replacement


   Type Designator: SIHFBC30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220AB
 

 SIHFBC30 substitution

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SIHFBC30 Datasheet (PDF)

 ..1. Size:1805K  vishay
 irfbc30 sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 ..2. Size:1808K  vishay
 irfbc30pbf sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 ..3. Size:1757K  infineon
 irfbc30 sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.2 Fast SwitchingRoHS*Qg (Max.) (nC) 31COMPLIANT Ease of ParallelingQgs (nC) 4.6 Simple Drive RequirementsQgd (nC) 17 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD DE

 0.1. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf pdf_icon

SIHFBC30

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

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Datasheet: SIHF9Z34S , SIHFB13N50A , SIHFB17N50L , SIHFB9N60A , SIHFB9N65A , SIHFBC20 , SIHFBC20L , SIHFBC20S , IRFB4110 , SIHFBC30A , SIHFBC30AL , SIHFBC30AS , SIHFBC30L , SIHFBC30S , SIHFBC40 , SIHFBC40A , SIHFBC40AS .

History: AOUS66414 | DH100P18D | RT1A045AP | SSF2610E | QM4001S | TPCA8027-H | APT901R3HN

Keywords - SIHFBC30 MOSFET datasheet

 SIHFBC30 cross reference
 SIHFBC30 equivalent finder
 SIHFBC30 lookup
 SIHFBC30 substitution
 SIHFBC30 replacement

 

 
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