SIHFBC30 Datasheet. Specs and Replacement

Type Designator: SIHFBC30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-220AB

SIHFBC30 substitution

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SIHFBC30 datasheet

 ..1. Size:1805K  vishay
irfbc30 sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE... See More ⇒

 ..2. Size:1808K  vishay
irfbc30pbf sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE... See More ⇒

 ..3. Size:1757K  infineon
irfbc30 sihfbc30.pdf pdf_icon

SIHFBC30

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE... See More ⇒

 0.1. Size:216K  vishay
irfbc30apbf sihfbc30a.pdf pdf_icon

SIHFBC30

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur... See More ⇒

Detailed specifications: SIHF9Z34S, SIHFB13N50A, SIHFB17N50L, SIHFB9N60A, SIHFB9N65A, SIHFBC20, SIHFBC20L, SIHFBC20S, AON6414A, SIHFBC30A, SIHFBC30AL, SIHFBC30AS, SIHFBC30L, SIHFBC30S, SIHFBC40, SIHFBC40A, SIHFBC40AS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.