SIHFBE30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFBE30
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET SIHFBE30
SIHFBE30 Datasheet (PDF)
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem
sihfbe30l sihfbe30s.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem
irfbe20pbf sihfbe20.pdf
IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbe20 sihfbe20.pdf
IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918