All MOSFET. SIHFBE30 Datasheet

 

SIHFBE30 MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHFBE30

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 78 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 310 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO-220AB

SIHFBE30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SIHFBE30 Datasheet (PDF)

1.1. sihfbe30.pdf Size:1520K _upd-mosfet

SIHFBE30 SIHFBE30

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 800 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 3.0 RoHS* • Fast Switching Qg (Max.) (nC) 78 COMPLIANT • Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

1.2. sihfbe30l sihfbe30s.pdf Size:473K _upd-mosfet

SIHFBE30 SIHFBE30

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ()VGS = 10 V 3.0 • Dynamic dV/dt Rating Qg (Max.) (nC) 78 • Repetitive Avalanche Rated Qgs (nC) 9.6 • Fast Switching Qgd (nC) 45 • Ease of Paralleling Configuration Single • Simple Drive Requirem

 1.3. irfbe30 sihfbe30.pdf Size:1517K _vishay

SIHFBE30 SIHFBE30

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-2

1.4. irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf Size:448K _vishay

SIHFBE30 SIHFBE30

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) (?)VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirements D Compli

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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