All MOSFET. SIHFBE30 Datasheet

 

SIHFBE30 Datasheet and Replacement


   Type Designator: SIHFBE30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220AB
 

 SIHFBE30 substitution

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SIHFBE30 Datasheet (PDF)

 ..1. Size:1517K  vishay
 irfbe30 sihfbe30.pdf pdf_icon

SIHFBE30

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 ..2. Size:1520K  vishay
 sihfbe30.pdf pdf_icon

SIHFBE30

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 ..3. Size:1469K  infineon
 irfbe30 sihfbe30.pdf pdf_icon

SIHFBE30

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 0.1. Size:448K  vishay
 irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf pdf_icon

SIHFBE30

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

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Datasheet: SIHFBC30S , SIHFBC40 , SIHFBC40A , SIHFBC40AS , SIHFBC40L , SIHFBC40LC , SIHFBC40S , SIHFBE20 , IRF1010E , SIHFBE30L , SIHFBE30S , SIHFBF20 , SIHFBF20L , SIHFBF20S , SIHFBF30 , SIHFBF30S , SIHFBG20 .

History: PE532DY | OSG60R1K8PF

Keywords - SIHFBE30 MOSFET datasheet

 SIHFBE30 cross reference
 SIHFBE30 equivalent finder
 SIHFBE30 lookup
 SIHFBE30 substitution
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