SIHFBF30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFBF30

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm

Encapsulados: TO-220AB

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SIHFBF30 datasheet

 ..1. Size:1073K  vishay
irfbf30pbf sihfbf30.pdf pdf_icon

SIHFBF30

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 ..2. Size:1070K  vishay
irfbf30 sihfbf30.pdf pdf_icon

SIHFBF30

IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 0.1. Size:264K  vishay
sihfbf30s.pdf pdf_icon

SIHFBF30

IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 900 Definition RDS(on) ( )VGS = 10 V 3.7 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 10 Fast Switching Qgd (nC) 42 Ease of Paralleling Simple Drive Requirements Configuration Single Compliant to R

 8.1. Size:1055K  vishay
irfbf20pbf sihfbf20.pdf pdf_icon

SIHFBF30

IRFBF20, SiHFBF20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitve Avalanche Rated RDS(on) ( )VGS = 10 V 8.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.7 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

Otros transistores... SIHFBC40S, SIHFBE20, SIHFBE30, SIHFBE30L, SIHFBE30S, SIHFBF20, SIHFBF20L, SIHFBF20S, 4435, SIHFBF30S, SIHFBG20, SIHFBG30, SIHFD014, SIHFD020, SIHFD024, SIHFD110, SIHFD113