SIHFBF30
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHFBF30
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 3.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 78
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7
Ohm
Package:
TO-220AB
SIHFBF30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHFBF30
Datasheet (PDF)
..1. Size:1073K vishay
irfbf30pbf sihfbf30.pdf 
IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
..2. Size:1070K vishay
irfbf30 sihfbf30.pdf
IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
0.1. Size:264K vishay
sihfbf30s.pdf
IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R
8.1. Size:1055K vishay
irfbf20pbf sihfbf20.pdf
IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
8.2. Size:270K vishay
irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs
8.3. Size:296K vishay
irfbf20spbf sihfbf20l sihfbf20s.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs
8.4. Size:1053K vishay
irfbf20 sihfbf20.pdf
IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
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