SIHFBF30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHFBF30
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 78 nC
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.7 Ohm
Тип корпуса: TO-220AB
SIHFBF30 Datasheet (PDF)
irfbf30pbf sihfbf30.pdf
IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbf30 sihfbf30.pdf
IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
sihfbf30s.pdf
IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R
irfbf20pbf sihfbf20.pdf
IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs
irfbf20spbf sihfbf20l sihfbf20s.pdf
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs
irfbf20 sihfbf20.pdf
IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918