SIHFD020 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFD020
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 16 nC
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: HVMDIP
Búsqueda de reemplazo de MOSFET SIHFD020
SIHFD020 Datasheet (PDF)
irfd020 sihfd020.pdf
IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC
irfd020 irfd020pbf sihfd020.pdf
IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC
irfd024pbf sihfd024.pdf
IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen
irfd024 sihfd024.pdf
IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen
irfd014 sihfd014.pdf
IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme
irfd014pbf sihfd014.pdf
IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918