All MOSFET. SIHFD020 Datasheet

 

SIHFD020 Datasheet and Replacement


   Type Designator: SIHFD020
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: HVMDIP
 

 SIHFD020 substitution

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SIHFD020 Datasheet (PDF)

 ..1. Size:242K  vishay
 irfd020 sihfd020.pdf pdf_icon

SIHFD020

IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC

 ..2. Size:218K  vishay
 irfd020 irfd020pbf sihfd020.pdf pdf_icon

SIHFD020

IRFD020, SiHFD020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 50Available Compact, End StackableRDS(on) ()VGS = 10 V 0.10RoHS* Fast SwitchingQg (Max.) (nC) 24 COMPLIANT Ease of ParallelingQgs (nC) 7.1 Excellent Temperature StabilityQgd (nC) 7.1Configuration Single Compliant to RoHS Directive 2002/95/EC

 7.1. Size:1270K  vishay
 irfd024pbf sihfd024.pdf pdf_icon

SIHFD020

IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen

 7.2. Size:1268K  vishay
 irfd024 sihfd024.pdf pdf_icon

SIHFD020

IRFD024, SiHFD024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.10RoHS* End StackableQg (Max.) (nC) 25COMPLIANT 175 C Operating TemperatureQgs (nC) 5.8Qgd (nC) 11 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requiremen

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Datasheet: SIHFBF20 , SIHFBF20L , SIHFBF20S , SIHFBF30 , SIHFBF30S , SIHFBG20 , SIHFBG30 , SIHFD014 , RFP50N06 , SIHFD024 , SIHFD110 , SIHFD113 , SIHFD120 , SIHFD210 , SIHFD214 , SIHFD220 , SIHFD224 .

Keywords - SIHFD020 MOSFET datasheet

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