SIHFD113 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFD113

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: HVMDIP

 Búsqueda de reemplazo de SIHFD113 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SIHFD113 datasheet

 ..1. Size:243K  vishay
 irfd113pbf sihfd113.pdf pdf_icon

SIHFD113

IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 60 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.8 End Stackable Qg (Max.) (nC) 7 Fast Switching Qgs (nC) 2 Qgd (nC) 7 Low Drive Current Configuration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro

 ..2. Size:243K  vishay
 irfd113 sihfd113.pdf pdf_icon

SIHFD113

IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY For Automatic Insertion VDS (V) 60 Compact Plastic Package RDS(on) ( )VGS = 10 V 0.8 End Stackable Qg (Max.) (nC) 7 Fast Switching Qgs (nC) 2 Qgd (nC) 7 Low Drive Current Configuration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro

 7.1. Size:147K  vishay
 irfd110 sihfd110.pdf pdf_icon

SIHFD113

IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall

 7.2. Size:149K  vishay
 irfd110pbf sihfd110.pdf pdf_icon

SIHFD113

IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT End Stackable Qgs (nC) 2.3 Qgd (nC) 3.8 175 C Operating Temperature Configuration Single Fast Switching and Ease of Parall

MOSTRAR MÁS

Otros transistores... SIHFBF30, SIHFBF30S, SIHFBG20, SIHFBG30, SIHFD014, SIHFD020, SIHFD024, SIHFD110, IRF1010E, SIHFD120, SIHFD210, SIHFD214, SIHFD220, SIHFD224, SIHFD310, SIHFD320, SIHFD420