SIHFD113 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHFD113
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: HVMDIP
Búsqueda de reemplazo de MOSFET SIHFD113
SIHFD113 Datasheet (PDF)
irfd113pbf sihfd113.pdf
IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
irfd113 sihfd113.pdf
IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro
irfd110 sihfd110.pdf
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
irfd110pbf sihfd110.pdf
IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall
irfd123 sihfd123.pdf
IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd120 sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd120pbf sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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