All MOSFET. SIHFD113 Datasheet

 

SIHFD113 Datasheet and Replacement


   Type Designator: SIHFD113
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: HVMDIP
 

 SIHFD113 substitution

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SIHFD113 Datasheet (PDF)

 ..1. Size:243K  vishay
 irfd113pbf sihfd113.pdf pdf_icon

SIHFD113

IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro

 ..2. Size:243K  vishay
 irfd113 sihfd113.pdf pdf_icon

SIHFD113

IRFD113, SiHFD113www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY For Automatic InsertionVDS (V) 60 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.8 End StackableQg (Max.) (nC) 7 Fast SwitchingQgs (nC) 2Qgd (nC) 7 Low Drive CurrentConfiguration Single Easily Paralleled Excellent Temperature Stability Compliant to Ro

 7.1. Size:147K  vishay
 irfd110 sihfd110.pdf pdf_icon

SIHFD113

IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall

 7.2. Size:149K  vishay
 irfd110pbf sihfd110.pdf pdf_icon

SIHFD113

IRFD110, SiHFD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 8.3COMPLIANT End StackableQgs (nC) 2.3Qgd (nC) 3.8 175 C Operating TemperatureConfiguration Single Fast Switching and Ease of Parall

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Datasheet: SIHFBF30 , SIHFBF30S , SIHFBG20 , SIHFBG30 , SIHFD014 , SIHFD020 , SIHFD024 , SIHFD110 , IRF530 , SIHFD120 , SIHFD210 , SIHFD214 , SIHFD220 , SIHFD224 , SIHFD310 , SIHFD320 , SIHFD420 .

History: IXFR30N110P

Keywords - SIHFD113 MOSFET datasheet

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