SIHFI820G Todos los transistores

 

SIHFI820G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIHFI820G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 92 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-220FP
 

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SIHFI820G datasheet

 ..1. Size:1793K  vishay
 irfi820g sihfi820g.pdf pdf_icon

SIHFI820G

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Si

 ..2. Size:1783K  vishay
 irfi820gpbf sihfi820g.pdf pdf_icon

SIHFI820G

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Si

 8.1. Size:1651K  vishay
 irfi840glcpbf sihfi840glc.pdf pdf_icon

SIHFI820G

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr

 8.2. Size:2786K  vishay
 sihfi840g.pdf pdf_icon

SIHFI820G

IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) ( )VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 34 Low Thermal Resistance Configuration Si

MOSTRAR MÁS

Otros transistores... SIHFI630G , SIHFI634G , SIHFI640G , SIHFI644G , SIHFI720G , SIHFI730G , SIHFI740G , SIHFI740GLC , AO3400A , SIHFI830G , SIHFI840G , SIHFI840GLC , SIHFI9520G , SIHFI9530G , SIHFI9540G , SIHFI9610G , SIHFI9620G .

 

 

 


 
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