All MOSFET. SIHFI820G Datasheet

 

SIHFI820G Datasheet and Replacement


   Type Designator: SIHFI820G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220FP
 

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SIHFI820G Datasheet (PDF)

 ..1. Size:1793K  vishay
 irfi820g sihfi820g.pdf pdf_icon

SIHFI820G

IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si

 ..2. Size:1783K  vishay
 irfi820gpbf sihfi820g.pdf pdf_icon

SIHFI820G

IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si

 8.1. Size:1651K  vishay
 irfi840glcpbf sihfi840glc.pdf pdf_icon

SIHFI820G

IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr

 8.2. Size:2786K  vishay
 sihfi840g.pdf pdf_icon

SIHFI820G

IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si

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Datasheet: SIHFI630G , SIHFI634G , SIHFI640G , SIHFI644G , SIHFI720G , SIHFI730G , SIHFI740G , SIHFI740GLC , RU6888R , SIHFI830G , SIHFI840G , SIHFI840GLC , SIHFI9520G , SIHFI9530G , SIHFI9540G , SIHFI9610G , SIHFI9620G .

History: SVF3N80MJ | APM2605C | MCH3478 | 2SK4006-01S | HM3421 | 2SK125 | ZXM66P03N8

Keywords - SIHFI820G MOSFET datasheet

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